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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 7, Iss. 10 — Oct. 1, 2009
  • pp: 924–925

Silicon electro-optic modulator with high-permittivity gate dielectric layer

Mengxia Zhu, Zhiping Zhou, and Dingshan Gao  »View Author Affiliations


Chinese Optics Letters, Vol. 7, Issue 10, pp. 924-925 (2009)


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Abstract

A high-permittivity (high-k) material is applied as the gate dielectric layer in a silicon metal-oxide-semiconductor (MOS) capacitor to form a special electro-optic (EO) modulator. Both induced charge density and modulation efficiency in the proposed modulator are improved due to the special structure design and the application of the high-k material. The device has an ultra-compact dimension of 691 \mu m in length.

© 2009 Chinese Optics Letters

OCIS Codes
(230.2090) Optical devices : Electro-optical devices
(230.4110) Optical devices : Modulators
(250.6715) Optoelectronics : Switching
(250.4110) Optoelectronics : Modulators

Citation
Mengxia Zhu, Zhiping Zhou, and Dingshan Gao, "Silicon electro-optic modulator with high-permittivity gate dielectric layer," Chin. Opt. Lett. 7, 924-925 (2009)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-7-10-924

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