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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 7, Iss. 3 — Mar. 1, 2009
  • pp: 226–230

InGaN/GaN laser diode characterization and quantum well number effect

S. M. Thahab, H. Abu Hassan, and Z. Hassan  »View Author Affiliations


Chinese Optics Letters, Vol. 7, Issue 3, pp. 226-230 (2009)


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Abstract

The effect of quantum well number on the quantum efficiency and temperature characteristics of InGaN/GaN laser diodes (LDs) is determined and investigated. The 3-nm-thick In_{0.13}Ga_{0.87}N wells and two 6-nm-thick GaN barriers are selected as an active region for Fabry-Perot (FP) cavity waveguide edge emitting LD. The internal quantum efficiency and internal optical loss coefficient are extracted through the simulation software for single, double, and triple InGaN/GaN quantum wells. The effects of device temperature on the laser threshold current, external differential quantum efficiency (DQE), and output wavelength are also investigated. The external quantum efficiency and characteristic temperature are improved significantly when the quantum well number is two. It is indicated that the laser structures with many quantum wells will suffer from the inhomogeneity of the carrier density within the quantum well itself which affects the LD performance.

© 2009 Chinese Optics Letters

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.2020) Lasers and laser optics : Diode lasers
(270.0270) Quantum optics : Quantum optics

Citation
S. M. Thahab, H. Abu Hassan, and Z. Hassan, "InGaN/GaN laser diode characterization and quantum well number effect," Chin. Opt. Lett. 7, 226-230 (2009)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-7-3-226


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