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Chinese Optics Letters

Chinese Optics Letters


  • Vol. 7, Iss. 4 — Apr. 1, 2009
  • pp: 271–273

Efficient above-band-gap light emission in germanium

Jifeng Liu, Xiaochen Sun, Yu Bai, Kenneth E. Lee, Eugene A. Fitzgerald, Lionel C. Kimerling, and Jurgen Michel  »View Author Affiliations

Chinese Optics Letters, Vol. 7, Issue 4, pp. 271-273 (2009)

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We report an above-band-gap radiative transition in the photoluminescence spectra of single crystalline Ge in the temperature range of 20~296 K. The temperature-independence of the peak position at ~0.74 eV is remarkably different from the behavior of direct and indirect gap transitions in Ge. This transition is observed in n-type, p-type, and intrinsic single crystal Ge alike, and its intensity decreases with the increase of temperature with a small activation energy of 56 meV. Some aspects of the transition are analogous to III-V semiconductors with dilute nitrogen doping, which suggests that the origin could be related to an isoelectronic defect.

© 2009 Chinese Optics Letters

OCIS Codes
(160.6000) Materials : Semiconductor materials
(300.6280) Spectroscopy : Spectroscopy, fluorescence and luminescence
(300.6470) Spectroscopy : Spectroscopy, semiconductors

Jifeng Liu, Xiaochen Sun, Yu Bai, Kenneth E. Lee, Eugene A. Fitzgerald, Lionel C. Kimerling, and Jurgen Michel, "Efficient above-band-gap light emission in germanium," Chin. Opt. Lett. 7, 271-273 (2009)

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