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Chinese Optics Letters

Chinese Optics Letters


  • Vol. 7, Iss. 4 — Apr. 1, 2009
  • pp: 274–276

Efficient 1.3-\mum electroluminescence from high concentration boron-diffused silicon p+-n junctions

Ting Chen, Guangzhao Ran, Liping You, Huabo Zhao, and Guogang Qin  »View Author Affiliations

Chinese Optics Letters, Vol. 7, Issue 4, pp. 274-276 (2009)

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Electroluminescence peaking at 1.3 \mum is observed from high concentration boron-diffused silicon p+-n junctions. This emission is efficient at low temperature with a quantum efficiency 40 times higher than that of the band-to-band emission around 1.1 \mum, but disappears at room temperature. The 1.3-\mum band possibly originates from the dislocation networks lying near the junction region, which are introduced by high concentration boron diffusion.

© 2009 Chinese Optics Letters

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(260.3060) Physical optics : Infrared
(260.3800) Physical optics : Luminescence

Ting Chen, Guangzhao Ran, Liping You, Huabo Zhao, and Guogang Qin, "Efficient 1.3-\mum electroluminescence from high concentration boron-diffused silicon p+-n junctions," Chin. Opt. Lett. 7, 274-276 (2009)

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