OSA's Digital Library

Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 7, Iss. 4 — Apr. 1, 2009
  • pp: 277–279

Luminescent-wavelength tailoring silicon-rich silicon nitride LED

Cheng-Tao Lin, Cheewee Liu, and Gong-Ru Lin  »View Author Affiliations


Chinese Optics Letters, Vol. 7, Issue 4, pp. 277-279 (2009)


View Full Text Article

Acrobat PDF (457 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

Wavelength tunable photoluminescence (PL) of Si-rich silicon nitride (SRSN) film with buried Si nanocrystals (Si-ncs) grown by plasma enhanced chemical vapor deposition (PECVD) under SiH4 and NH3 environment is investigated. Intense broadband visible emissions tunable from blue to red can be obtained from the as-deposited SiNx thin films with increasing NH3 flow rate from 150 to 250 sccm and detuning the SiH4/NH3 flow ratio during deposition. To date, the normalized PL wavelength of SiNx films after annealing could be detuned over the range of 385~675 nm by decreasing the NH3 flow rate, corresponding to an enlargement on Si-nc size from 1.5~2 to 4~5 nm. The PL linewidth is decreased with increasing ammonia flow rate due to the improved uniformity of Si-ncs under high NH3 flow rate condition. In addition, the PL intensity is monotonically increasing with the blue shift of PL wavelength due to the increasing density of small-size Si-ncs. The ITO/SiNx/p-Si/Al diode reveals highly resistive property with the turn-on voltage and power-voltage slope of only 20 V and 0.18 nW/V, respectively. The turn-on voltage can further reduce from 20 to 3.8 V by improving the carrier injection efficiency with p-type Si nano-rods.

© 2009 Chinese Optics Letters

OCIS Codes
(160.4670) Materials : Optical materials
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

Citation
Cheng-Tao Lin, Cheewee Liu, and Gong-Ru Lin, "Luminescent-wavelength tailoring silicon-rich silicon nitride LED," Chin. Opt. Lett. 7, 277-279 (2009)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-7-4-277

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Log in to access OSA Member Subscription

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Log in to access OSA Member Subscription

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited