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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 7, Iss. 4 — Apr. 1, 2009
  • pp: 277–279

Luminescent-wavelength tailoring silicon-rich silicon nitride LED

Cheng-Tao Lin, Cheewee Liu, and Gong-Ru Lin  »View Author Affiliations


Chinese Optics Letters, Vol. 7, Issue 4, pp. 277-279 (2009)


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Abstract

Wavelength tunable photoluminescence (PL) of Si-rich silicon nitride (SRSN) film with buried Si nanocrystals (Si-ncs) grown by plasma enhanced chemical vapor deposition (PECVD) under SiH4 and NH3 environment is investigated. Intense broadband visible emissions tunable from blue to red can be obtained from the as-deposited SiNx thin films with increasing NH3 flow rate from 150 to 250 sccm and detuning the SiH4/NH3 flow ratio during deposition. To date, the normalized PL wavelength of SiNx films after annealing could be detuned over the range of 385~675 nm by decreasing the NH3 flow rate, corresponding to an enlargement on Si-nc size from 1.5~2 to 4~5 nm. The PL linewidth is decreased with increasing ammonia flow rate due to the improved uniformity of Si-ncs under high NH3 flow rate condition. In addition, the PL intensity is monotonically increasing with the blue shift of PL wavelength due to the increasing density of small-size Si-ncs. The ITO/SiNx/p-Si/Al diode reveals highly resistive property with the turn-on voltage and power-voltage slope of only 20 V and 0.18 nW/V, respectively. The turn-on voltage can further reduce from 20 to 3.8 V by improving the carrier injection efficiency with p-type Si nano-rods.

© 2009 Chinese Optics Letters

OCIS Codes
(160.4670) Materials : Optical materials
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

Citation
Cheng-Tao Lin, Cheewee Liu, and Gong-Ru Lin, "Luminescent-wavelength tailoring silicon-rich silicon nitride LED," Chin. Opt. Lett. 7, 277-279 (2009)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-7-4-277


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