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Chinese Optics Letters

Chinese Optics Letters


  • Vol. 7, Iss. 4 — Apr. 1, 2009
  • pp: 280–285

Hybrid silicon modulators

Hui-Wen Chen, Yinghao Kuo, and J. E. Bowers  »View Author Affiliations

Chinese Optics Letters, Vol. 7, Issue 4, pp. 280-285 (2009)

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A number of active elements have been demonstrated using the hybrid silicon evanescent platform, including lasers, amplifiers, and detectors. In this letter, two types of hybrid silicon modulators, fulfilling the building blocks in optical communication on this platform, are presented. A hybrid silicon electroabsorption modulator, suitable for high speed interconnects, with 10-dB extinction ratio at -5 V and 16-GHz modulation bandwidth is demonstrated. In addition, a hybrid silicon Mach-Zehnder modulator utilizing carrier depletion in multiple quantum wells is proved with 2 Vmm voltage-length product, 150-nm optical bandwidth, and a large signal modulation up to 10 Gb/s.

© 2009 Chinese Optics Letters

OCIS Codes
(200.4650) Optics in computing : Optical interconnects
(230.2090) Optical devices : Electro-optical devices
(250.0250) Optoelectronics : Optoelectronics
(250.7360) Optoelectronics : Waveguide modulators
(230.4205) Optical devices : Multiple quantum well (MQW) modulators
(250.6715) Optoelectronics : Switching

Hui-Wen Chen, Yinghao Kuo, and J. E. Bowers, "Hybrid silicon modulators," Chin. Opt. Lett. 7, 280-285 (2009)

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