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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 7, Iss. 4 — Apr. 1, 2009
  • pp: 332–334

Fabrication of nc-Si/SiO2 structure by thermal oxidation method and its luminescence characteristics

Haojie Zhang, Longzhi Lin, and Shaoji Jiang  »View Author Affiliations


Chinese Optics Letters, Vol. 7, Issue 4, pp. 332-334 (2009)


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Abstract

Nano-crystalline silicon/silicon oxide (nc-Si/SiO2 structures have been prepared from amorphous silicon films on both silicon and quartz substrates by using electron-beam evaporation approach and annealing at temperatures about 600 oC in air. As a thermal oxidation procedure, the annealing treatment is not only a crystallization process but also an oxidation process. Scanning electron microscopy is employed to characterize the surface morphology of the nc-Si/SiO2 layers. Transmission electron microscopy study shows the sizes of nc-Si grains on the two different substrates. The nc-Si/SiO2 structures exhibit visible luminescence at room temperature as confirmed by photoluminescence spectroscopy. Comparing the photoluminescence spectra of different samples, our results agree with the quantum confinement-luminescence center model.

© 2009 Chinese Optics Letters

OCIS Codes
(160.5140) Materials : Photoconductive materials
(250.5230) Optoelectronics : Photoluminescence
(310.6860) Thin films : Thin films, optical properties

Citation
Haojie Zhang, Longzhi Lin, and Shaoji Jiang, "Fabrication of nc-Si/SiO2 structure by thermal oxidation method and its luminescence characteristics," Chin. Opt. Lett. 7, 332-334 (2009)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-7-4-332

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