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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 7, Iss. 5 — May. 1, 2009
  • pp: 432–434

Optoelectronic characterization of ZnS/PS systems

Caifeng Wang, Qingshan Li, and Bo Hu  »View Author Affiliations


Chinese Optics Letters, Vol. 7, Issue 5, pp. 432-434 (2009)


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Abstract

ZnS thin films are deposited on porous silicon (PS) substrates with different porosities by pulsed laser deposition (PLD). The photoluminescence (PL) spectra of the samples are measured at room temperature. The results show that the PL intensity of PS after deposition of ZnS increases and is associated with a blue shift. With the increase of PS porosity, a green emission at about 550 nm is observed in the PL spectra of ZnS/PS systems, which may be ascribed to the defect-center luminescence of ZnS films. Junction current-voltage (I-V) characteristics were studied. The rectifying behavior of I-V characteristics indicates the formation of ZnS/PS heterojunctions, and the forward current is seen to increase when the PS porosity is increased.

© 2009 Chinese Optics Letters

OCIS Codes
(230.4170) Optical devices : Multilayers
(250.0250) Optoelectronics : Optoelectronics
(310.6860) Thin films : Thin films, optical properties

Citation
Caifeng Wang, Qingshan Li, and Bo Hu, "Optoelectronic characterization of ZnS/PS systems," Chin. Opt. Lett. 7, 432-434 (2009)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-7-5-432

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