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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 7, Iss. 5 — May. 1, 2009
  • pp: 435–436

Simulation of quantum-well slipping effect on optical bandwidth in transistor laser

Hassan Kaatuzian and Seyed Iman Taghavi  »View Author Affiliations


Chinese Optics Letters, Vol. 7, Issue 5, pp. 435-436 (2009)


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Abstract

An optical bandwidth analysis of a quantum-well (16 nm) transistor laser with 150-\mum cavity length using a charge control model is reported in order to modify the quantum-well location through the base region. At constant bias current, the simulation shows significant enhancement in optical bandwidth due to moving the quantum well in the direction of collector-base junction. No remarkable resonance peak, limiting factor in laser diodes, is observed during this modification in transistor laser structure. The method can be utilized for transistor laser structure design.

© 2009 Chinese Optics Letters

OCIS Codes
(230.0230) Optical devices : Optical devices
(250.0250) Optoelectronics : Optoelectronics
(270.0270) Quantum optics : Quantum optics

Citation
Hassan Kaatuzian and Seyed Iman Taghavi, "Simulation of quantum-well slipping effect on optical bandwidth in transistor laser," Chin. Opt. Lett. 7, 435-436 (2009)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-7-5-435


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References

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