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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 7, Iss. 6 — Jun. 1, 2009
  • pp: 489–491

MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications

Peixu Li, Ling Wang, Shuqiang Li, Wei Xia, Xin Zhang, Qingmin Tang, Zhongxiang Ren, and Xiangang Xu  »View Author Affiliations


Chinese Optics Letters, Vol. 7, Issue 6, pp. 489-491 (2009)


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Abstract

In order to improve the characteristics of the general broad-waveguide 808-nm semiconductor laser diode (LD), we design a new type quantum well LD with an asymmetric cladding structure. The structure is grown by metal organic chemical vapor deposition (MOCVD). For the devices with 100-\mum-wide stripe and 1000-\mum-long cavity under continuous-wave (CW) operation condition, the typical threshold current is 190 mA, the slope efficiency is 1.31 W/A, the wall-plug efficiency reaches 63%, and the maximum output power reaches higher than 7 W. And the internal absorption value decreases to 1.5 cm^{-1}.

© 2009 Chinese Optics Letters

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

Citation
Peixu Li, Ling Wang, Shuqiang Li, Wei Xia, Xin Zhang, Qingmin Tang, Zhongxiang Ren, and Xiangang Xu, "MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications," Chin. Opt. Lett. 7, 489-491 (2009)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-7-6-489

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