MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications
Chinese Optics Letters, Vol. 7, Issue 6, pp. 489-491 (2009)
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Abstract
In order to improve the characteristics of the general broad-waveguide 808-nm semiconductor laser diode (LD), we design a new type quantum well LD with an asymmetric cladding structure. The structure is grown by metal organic chemical vapor deposition (MOCVD). For the devices with 100-\mum-wide stripe and 1000-\mum-long cavity under continuous-wave (CW) operation condition, the typical threshold current is 190 mA, the slope efficiency is 1.31 W/A, the wall-plug efficiency reaches 63%, and the maximum output power reaches higher than 7 W. And the internal absorption value decreases to 1.5 cm^{-1}.
© 2009 Chinese Optics Letters
OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
Citation
Peixu Li, Ling Wang, Shuqiang Li, Wei Xia, Xin Zhang, Qingmin Tang, Zhongxiang Ren, and Xiangang Xu, "MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications," Chin. Opt. Lett. 7, 489-491 (2009)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-7-6-489
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