Abstract

SiO<sub>2</sub> thin films containing Si<sub>1-x</sub>Ge<sub>x</sub> quantum dots (QDs) are prepared by ion implantation and annealing treatment. The photoluminescence (PL) and microstructural properties of thin films are investigated. The samples exhibit strong PL in the wavelength range of 400?470 nm and relatively weak PL peaks at 730 and 780 nm at room temperature. Blue shift is found for the 400-nm PL peak, and the intensity increases initially and then decreases with the increase of Ge-doping dose. We propose that the 400?470 nm PL band originates from multiple luminescence centers, and the 730- and 780-nm PL peaks are ascribed to the Si=O and GeO luminescence centers.

© 2009 Chinese Optics Letters

Dependences of photoluminescence from P-implanted epitaxial Ge

L. Ding, Andy Eu-Jin Lim, Jason Tsung-Yang Liow, M. B. Yu, and G.-Q. Lo
Opt. Express 20(8) 8228-8239 (2012)

Time-resolved and temperature-dependent photoluminescence study on phosphorus doped Si quantum dots/SiO₂ multilayers with ultra-small dot sizes

Peng Lu, Dongke Li, Pei Zhang, Dameng Tan, Weiwei Mu, Jun Xu, Wei Li, and Kunji Chen
Opt. Mater. Express 6(10) 3233-3241 (2016)

Light emitting properties of Si⁺ self-ion implanted silicon-on-insulator from visible to infrared band

Lingxi Ouyang, Chong Wang, Xiaoxu Feng, Jie Yang, Mengwei Zhou, Feng Qiu, Rongfei Wang, and Yu Yang
Opt. Express 26(12) 15899-15907 (2018)

1.54  μm photoluminescence enhancenment of Er³⁺-doped ZnO films containing nc-Ge: joint effect from Er³⁺ local environment changing and energy transfer of nc-Ge

Ranran Fan, Fei Lu, and Kaikai Li
Photon. Res. 5(6) 567-570 (2017)

Plasma power controlled deposition of SiO_x with manipulated Si Quantum Dot size for photoluminescent wavelength tailoring

Bo-Han Lai, Chih-Hsien Cheng, Yi-Hao Pai, and Gong-Ru Lin
Opt. Express 18(5) 4449-4456 (2010)