We present the investigation on LaF3/porous silicon (PS) system that has properties of both the materials to be applied in photonics. Epilayers of LaF3 are grown on PS under different anodization conditions using electron-beam evaporation (EBE). The characteristics of the LaF3/PS system are analyzed by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), and photoluminescence (PL). XRD confirms the polycrystalline nature of the LaF3 film. Nearly stoichiometric growth of LaF3 on PS is established by EDX. Such a thin LaF3 layer grown on PS leads to a good enhancement of PL yield of PS. But with the increasing thickness of LaF3 layer, PL intensity of PS is found to decrease along with a small blue-shift.
© 2010 Chinese Optics Letters
Halima Khatun, Sinthia Shabnam Mou, Abdul Al Mortuza, and Abu Bakar Md. Ismail, "Investigation on LaF3/porous silicon system for photonic application," Chin. Opt. Lett. 8, 306-308 (2010)