We present the investigation on LaF<sub>3</sub>/porous silicon (PS) system that has properties of both the materials to be applied in photonics. Epilayers of LaF<sub>3</sub> are grown on PS under different anodization conditions using electron-beam evaporation (EBE). The characteristics of the LaF<sub>3</sub>/PS system are analyzed by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), and photoluminescence (PL). XRD confirms the polycrystalline nature of the LaF<sub>3</sub> film. Nearly stoichiometric growth of LaF<sub>3</sub> on PS is established by EDX. Such a thin LaF<sub>3</sub> layer grown on PS leads to a good enhancement of PL yield of PS. But with the increasing thickness of LaF<sub>3</sub> layer, PL intensity of PS is found to decrease along with a small blue-shift.
© 2010 Chinese Optics Letters
Halima Khatun, Sinthia Shabnam Mou, Abdul Al Mortuza, and Abu Bakar Md. Ismail, "Investigation on LaF3/porous silicon system for photonic application," Chin. Opt. Lett. 8, 306-308 (2010)