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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 8, Iss. 7 — Jul. 1, 2010
  • pp: 683–684

Photoluminescence study of the annihilation process of donor-bound excitons in ZnO: observation of quantum mechanical interference

Shenlei Shi and Tengchao Huang  »View Author Affiliations


Chinese Optics Letters, Vol. 8, Issue 7, pp. 683-684 (2010)


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Abstract

We report a photoluminescence observation of the coupling of donor-bound excitons and longitudinal optical phonons in high-quality ZnO crystals at 5 K. The first-order phonon Stockes line of donor-bound excitons exhibits a distinct asymmetric line shape with a clear dip at its higher energy side, suggesting that quantum mechanical interference occurs during the annihilation of donor-bound excitons. The donor binding energy is determined to be 49.3 meV from spectral featural.

© 2010 Chinese Optics Letters

OCIS Codes
(160.0160) Materials : Materials
(160.4670) Materials : Optical materials

Citation
Shenlei Shi and Tengchao Huang, "Photoluminescence study of the annihilation process of donor-bound excitons in ZnO: observation of quantum mechanical interference," Chin. Opt. Lett. 8, 683-684 (2010)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-8-7-683

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