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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 9, Iss. 1 — Jan. 10, 2011
  • pp: 010401–

Transmission-mode GaN photocathode based on graded AlxGa1?xN buffer layer

Xiaoqing Du, Benkang Chang, Yunsheng Qian, and Pin Gao  »View Author Affiliations


Chinese Optics Letters, Vol. 9, Issue 1, pp. 010401- (2011)


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Abstract

We create a GaN photocathode based on graded AlxGa1?xN buffer layers to overcome the influence of buffer-emission layer interface on the photoemission of transmission-mode GaN photocathodes. A gate-shaped spectral response with a 260-nm starting wavelength and a 375-nm cut-off wavelength is obtained. Average quantum efficiency is 15% and short wavelength responses are almost equivalent to long wavelength ones. The fitted interface recombination velocity is 5?04 cm/s, with negligible magnitude, proving that the design of the graded buffer layers is efficient in obtaining good interface quality between the buffer and the emission layer.

© 2011 Chinese Optics Letters

OCIS Codes
(040.7190) Detectors : Ultraviolet
(160.1890) Materials : Detector materials
(230.0040) Optical devices : Detectors
(260.7210) Physical optics : Ultraviolet, vacuum

Citation
Xiaoqing Du, Benkang Chang, Yunsheng Qian, and Pin Gao, "Transmission-mode GaN photocathode based on graded AlxGa1?xN buffer layer," Chin. Opt. Lett. 9, 010401- (2011)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-9-1-010401

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