We examine the saturation of relative current gain of In0.53Ga0.47As/InP single photon avalanche diodes (SPADs) operated in Geiger mode. The punch-through voltage and breakdown voltage of the SPADs can be measured using a simple and accurate method. The analysis method is temperature-independent and can be applied to most SPADs.
© 2011 Chinese Optics Letters
Peng Zhou, Changjun Liao, Zhengjun Wei, Chunfei Li, and Shuqiong Yuan, "Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes," Chin. Opt. Lett. 9, 010402- (2011)