Temperature dependence of photoluminescence property in BaIn2O4
Chinese Optics Letters, Vol. 9, Issue 1, pp. 011602- (2011)
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Abstract
The temperature-dependent photoluminescence (PL) spectra of BaIn2O4, prepared by coprecipitation, are measured and discussed. Aside from the reported 3.02-eV violet emission, the 1.81-eV yellow emission involved with oxygen vacancy is also observed at room temperature wherein the deep donor level is at 1.2 eV. With the temperature increasing, the peak energies for both emissions show a red shift. Moreover, the yellow emission intensity decreases while the violet emission intensity increases. The temperature dependence of the yellow emission intensity fits very well into the one-step quenching process equation, indicating a fitted activation energy at 19.2 meV.
© 2011 Chinese Optics Letters
OCIS Codes
(000.2190) General : Experimental physics
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
Citation
Huiyong Deng, Qiwei Wang, Ping Ren, Jie Wu, Junchao Tao, Xin Chen, and Ning Dai, "Temperature dependence of photoluminescence property in BaIn2O4," Chin. Opt. Lett. 9, 011602- (2011)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-9-1-011602
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