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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 9, Iss. 10 — Oct. 10, 2011
  • pp: 100401–

Theoretical optimization of the characteristics of ZnO metal-semiconductor-metal photodetectors

Ghania Harzallah and Mohamed Remram  »View Author Affiliations


Chinese Optics Letters, Vol. 9, Issue 10, pp. 100401- (2011)


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Abstract

A two-dimensional model of a metal-semiconductor-metal (MSM) ZnO-based photodetector (PD) is developed. The PD is based on a drift diffusion model of a semiconductor that allows the calculation of potential distribution inside the structure, the transversal and longitudinal distributions of the electric field, and the distribution of carrier concentration. The ohmicity of the contact has been confirmed. The dark current of MSM PD based ZnO for different structural dimensions are likewise calculated. The calculations are comparable with the experimental results. Therefore, the influence with respect to parameters s (finger spacing) and w (finger width) is studied, which results in the optimization of these parameters. The best optimization found to concur with the experimental results is s = 16 \mu m, w = 16 \mu m, l = 250 \mu m, L = 350 \mu m, where l is the finger length and L is the length of the structure. This optimization provides a simulated dark current equal to 24.5 nA at the polarization of 3 V.

© 2011 Chinese Optics Letters

OCIS Codes
(040.5160) Detectors : Photodetectors
(160.6000) Materials : Semiconductor materials
(250.0250) Optoelectronics : Optoelectronics

Citation
Ghania Harzallah and Mohamed Remram, "Theoretical optimization of the characteristics of ZnO metal-semiconductor-metal photodetectors," Chin. Opt. Lett. 9, 100401- (2011)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-9-10-100401

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