Abstract
Intrinsic zinc oxide films, normally deposited by radio frequency (RF)
sputtering, are fabricated by direct current (DC) sputtering. The oxygen-deficient
targets are prepared via a newly developed double crucible method. The 800-nm-thick
film obtaines significantly higher carrier mobility compareing with that of the
800-nm-thick ZnO film. This is achieved by the widely used RF sputtering, which
favors the prevention of carrier recombination at the interfaces and reduction of
the series resistance of solar cells. The optimal ZnO film is used in a Cu (ln, Ga)
Se2 (CIGS) solar cell with a high efficiency of 11.57%. This letter demonstrates
that the insulating ZnO films can be deposited by DC sputtering from
oxygen-deficient ZnO targets to lower the cost of thin film solar cells.
© 2011 Chinese Optics Letters
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