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Chinese Optics Letters

Chinese Optics Letters


  • Vol. 9, Iss. 10 — Oct. 10, 2011
  • pp: 103102–

Intrinsic ZnO f ilms fabricated by DC sputtering from oxygen-def icient targets for Cu(In,Ga)Se2 solar cell application

Chongyin Yang, Dongyun Wan, Zhou Wang, and Fuqiang Huang  »View Author Affiliations

Chinese Optics Letters, Vol. 9, Issue 10, pp. 103102- (2011)

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Intrinsic zinc oxide films, normally deposited by radio frequency (RF) sputtering, are fabricated by direct current (DC) sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible method. The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film. This is achieved by the widely used RF sputtering, which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells. The optimal ZnO film is used in a Cu (ln, Ga) Se2 (CIGS) solar cell with a high efficiency of 11.57%. This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.

© 2011 Chinese Optics Letters

OCIS Codes
(310.1860) Thin films : Deposition and fabrication
(310.6845) Thin films : Thin film devices and applications
(310.7005) Thin films : Transparent conductive coatings

Chongyin Yang, Dongyun Wan, Zhou Wang, and Fuqiang Huang, "Intrinsic ZnO f ilms fabricated by DC sputtering from oxygen-def icient targets for Cu(In,Ga)Se2 solar cell application," Chin. Opt. Lett. 9, 103102- (2011)

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