Abstract
We present a theoretical investigation of THz long-range surface plasmon
polaritons propagating on thin layers of InSb. The metallic behavior of doped
semiconductors at THz frequencies allows the excitation of surface plasmon
polaritons with propagation and confinement lengths that can be actively controlled.
This control is achieved by acting on the free carrier density, which can be
realized by changing the temperature of InSb.
© 2011 Chinese Optics Letters
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