Influence of GaAs substrate on the transmission performance of epitaxially grown Fabry-Peerot f ilter
Chinese Optics Letters, Vol. 9, Issue 11, pp. 111301- (2011)
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Abstract
The influence of GaAs substrate on the transmission performance of a multi-film Fabry-Peerot filter (FPF), fabricated by metalorganic chemical vapor deposition epitaxial growth on GaAs substrate, is investigated using the transfer matrix method. On the basis of the theoretical simulation, we determine that the quality of the resonant transmission peak of this epitaxially grown FPF (EG-FPF) deteriorates through splitting when the substrate is taken into account. Rapid periodic oscillation of peak-transmittivity along with the alteration of substrate thickness is also observed in the simulation results. Finally, a remarkably improved transmission performance of the EG-FPF is obtained by thinning the substrate down to a suitable thickness range through well-controlled grinding and polishing.
© 2011 Chinese Optics Letters
OCIS Codes
(130.3130) Integrated optics : Integrated optics materials
(230.1480) Optical devices : Bragg reflectors
(230.7408) Optical devices : Wavelength filtering devices
ToC Category:
Integrated Optics
Citation
Wei Wang, Yongqing Huang, Xiaofeng Duan, Qiang Yan, Xiaomin Ren, Shiwei Cai, Jingwei Guo, and Hui Huang, "Influence of GaAs substrate on the transmission performance of epitaxially grown
Fabry-Peerot f ilter," Chin. Opt. Lett. 9, 111301- (2011)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-9-11-111301
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