Stacking-faults-free zinc blende GaAs/AlGaAs axial heterostructure nanowires during vapor-liquid-solid growth
Chinese Optics Letters, Vol. 9, Issue 4, pp. 041601- (2011)
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Abstract
Pure zinc blende structure GaAs/AlGaAs axial heterostructure nanowires (NWs) are grown by metal organic chemical vapor deposition on GaAs(111) B substrates using Au-catalyzed vapor-liquid-solid mechanism. Al adatom enhances the influence of diameters on NWs growth rate. NWs are grown mainly through the contributions from the direct impingement of the precursors onto the alloy droplets and not so much from adatom diffusion. The results indicate that the droplet acts as a catalyst rather than an adatom collector.
© 2011 Chinese Optics Letters
OCIS Codes
(310.3840) Thin films : Materials and process characterization
(160.4236) Materials : Nanomaterials
Citation
Jingwei Guo, Hui Huang, Xiaomin Ren, Xin Yan, Shiwei Cai, Yongqing Huang, Qi Wang, Xia Zhang, and Wei Wang, "Stacking-faults-free zinc blende GaAs/AlGaAs axial heterostructure nanowires
during vapor-liquid-solid growth," Chin. Opt. Lett. 9, 041601- (2011)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-9-4-041601
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