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Chinese Optics Letters

Chinese Optics Letters


  • Vol. 9, Iss. 5 — May. 10, 2011
  • pp: 052501–

Ultraviolet photodetector with bandpass characteristic based on a blend of PVK and PBD

Jian Sun, Kuanjun Peng, Lu Zhu, Zuofu Hu, Qian Dai, Xiqing Zhang, and Yongsheng Wang  »View Author Affiliations

Chinese Optics Letters, Vol. 9, Issue 5, pp. 052501- (2011)

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We fabricate an ultraviolet photodetector based on a blend of poly (N-vinylcarbazole) (PVK) and 2-tert-butylphenyl-5-biphenyl-1,3, 4-oxadiazole (PBD) using spin coating. The device exhibites a low dark current density of 2.2 \times 10?3 \muA/cm2 at zero bias. The spectral response of the device shows a narrow bandpass characteristic from 300 to 355 nm, and the peak response is 18.6 mA/W located at 334 nm with a bias of -1 V. We also study the performances of photodetectors with different blend layer thicknesses. The largest photocurrent density is obtained with a blend of 90 nm at the same voltage.

© 2011 Chinese Optics Letters

OCIS Codes
(250.2080) Optoelectronics : Polymer active devices
(310.1860) Thin films : Deposition and fabrication
(310.6845) Thin films : Thin film devices and applications
(250.0040) Optoelectronics : Detectors

Jian Sun, Kuanjun Peng, Lu Zhu, Zuofu Hu, Qian Dai, Xiqing Zhang, and Yongsheng Wang, "Ultraviolet photodetector with bandpass characteristic based on a blend of PVK and PBD," Chin. Opt. Lett. 9, 052501- (2011)

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