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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 9, Iss. 5 — May. 10, 2011
  • pp: 053102–

Spectroscopic ellipsometric properties and resistance switching behavior in Six(ZrO2)100?x films

Xiaodong Wang, Liang Feng, Shenjin Wei, Huanfeng Zhu, Kun Chen, Da Xu, Ying Zhang, and Jing Li  »View Author Affiliations


Chinese Optics Letters, Vol. 9, Issue 5, pp. 053102- (2011)


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Abstract

We prepare Six(ZrO2)100?x composite films using the co-sputtering method. The chemical structures of the films which are prepared under different conditions are analyzed with X-ray photoemission spectroscopy. Thermal treatment influences on optical property and resistance switching characteristics of these composite films are investigated by spectroscopic ellipsometry and semiconductor parameter analyzer, respectively. With the proper Si-doped Six(ZrO2)100?x interlayer, the Al/ Six(ZrO2)100?x/Al device cell samples present very reliable and reproducible switching behaviors. It provides a feasible solution for easy multilevel storage and better fault tolerance in nonvolatile memory application.

© 2011 Chinese Optics Letters

OCIS Codes
(310.6860) Thin films : Thin films, optical properties
(310.6188) Thin films : Spectral properties
(250.6715) Optoelectronics : Switching

Citation
Xiaodong Wang, Liang Feng, Shenjin Wei, Huanfeng Zhu, Kun Chen, Da Xu, Ying Zhang, and Jing Li, "Spectroscopic ellipsometric properties and resistance switching behavior in Six(ZrO2)100?x films," Chin. Opt. Lett. 9, 053102- (2011)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-9-5-053102


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