Abstract
We prepare Six(ZrO2)100?x composite films using the co-sputtering method. The
chemical structures of the films which are prepared under different conditions are
analyzed with X-ray photoemission spectroscopy. Thermal treatment influences on
optical property and resistance switching characteristics of these composite films
are investigated by spectroscopic ellipsometry and semiconductor parameter analyzer,
respectively. With the proper Si-doped Six(ZrO2)100?x interlayer, the Al/
Six(ZrO2)100?x/Al device cell samples present very reliable and reproducible
switching behaviors. It provides a feasible solution for easy multilevel storage and
better fault tolerance in nonvolatile memory application.
© 2011 Chinese Optics Letters
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