Different pattern structures are obtained on the AgInSbTe (AIST) phase change film as induced by laser beam. Atomic force microscopy (AFM) was used to observe and analyze the different pattern structures. The AFM photos clearly show the gradually changing process of pattern structures induced by different threshold effects, such as crystallization threshold, microbump threshold, melting threshold, and ablation threshold. The analysis indicates that the AIST material is very effective in the fabrication of pattern structures and can offer relevant guidance for application of the material in the future.
© 2011 Chinese Optics Letters
Aihuan Dun, Jingsong Wei, and Fuxi Gan, "Laser direct writing pattern structures on AgInSbTe phase change thin film," Chin. Opt. Lett. 9, 082101-082101 (2011)