A-plane GaN films are deposited on (302) \gamma-LiAlO2 substrates by metalorganic chemical vapor deposition (MOCVD). The X-ray diffraction (XRD) results indicate that the in-plane orientation relationship between GaN and LAO substrates is LAO//GaN and LAO//GaN with 0.03% and 2.85% lattice mismatch, respectively. Raman scattering results indicate that the strain in the films decreases along with the increase in the thickness of the films. In addition to the band edge emission at 3.42 eV, defects-related luminescence at 3.35 eV is observed in the photoluminescence (PL) spectra. The cathodoluminescence (CL) spectra indicate that the 3.35-eV emission is related to the V pits.
© 2011 Chinese Optics Letters
(300.6470) Spectroscopy : Spectroscopy, semiconductors
(310.0310) Thin films : Thin films
(310.1860) Thin films : Deposition and fabrication
(310.6860) Thin films : Thin films, optical properties
Tingting Jia, Shengming Zhou, Hui Lin, Hao Teng, Xiaorui Hou, Jianqi Liu, Jun Huang, Min Zhang, Jianfeng Wang, and Ke Xu, "Characteristics of the crystalline and luminescence properties of a-plane GaN films grown on \gamma-LiAlO2 (302) substrates," Chin. Opt. Lett. 9, 093101- (2011)