Abstract
A computationally efficient simulation model for the drain current characteristics
of long-channel amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs)
is developed. This model uses numerical solutions of the one-dimensional Poisson
equation to significantly reduce the calculation time compared to a widely
used two-dimensional approach. Moreover, for accurate simulation, the model
takes into account the influence of trap states in the band gap, which makes
it possible to reproduce the gradual increase of the drain current in the
subthreshold region. The model also includes both drift and diffusion components
of the drain current and so can describe the drain current in all regions
of device operation, i.e., the subthreshold, linear, and saturation regions,
by using a unified current equation without introducing the threshold voltage
as an input parameter. Calculations using the model provide results that are
in good agreement with the measured drain current characteristics of a-IGZO
TFTs over a wide range of gate and drain voltages. The presented model is
expected to enable faster and accurate characteristic analysis and structure
design for a-IGZO TFTs.
© 2014 IEEE
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