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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 10, Iss. 4 — Apr. 1, 2014
  • pp: 317–320

A Hybrid a-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits

Longyan Wang, Lei Sun, Dedong Han, Yi Wang, Mansun Chan, and Shengdong Zhang

Journal of Display Technology, Vol. 10, Issue 4, pp. 317-320 (2014)


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Abstract

A hybrid thin film transistor (TFT) technology is proposed and demonstrated, which features a simultaneous fabrication of amorphous silicon (a-Si) TFTs with low off-current and polycrystalline silicon (poly-Si) TFTs with high carrier mobility on one substrate in one single process. For the a-Si TFT fabrication, the active film is the as-deposited LPCVD a-Si film, whereas, for the poly-Si TFT fabrication, the poly-Si active film is the locally crystallized LPCVD a-Si film. The localized crystallization is realized via using metal-induced lateral crystallization (MILC) method. This proposed technology is applicable to active-matrix organic light-emitting diode (AMOLED) pixel circuits where switching TFTs and driving TFTs are required to be with low off-current and high on-current, respectively.

© 2014 IEEE

Citation
Longyan Wang, Lei Sun, Dedong Han, Yi Wang, Mansun Chan, and Shengdong Zhang, "A Hybrid a-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits," J. Display Technol. 10, 317-320 (2014)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-10-4-317

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