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Journal of Display Technology

Journal of Display Technology


  • Vol. 3, Iss. 2 — Jun. 1, 2007
  • pp: 118–125

High Brightness GaN-Based Light-Emitting Diodes

Ya-Ju Lee, Tien-Chang Lu, Hao-Chung Kuo, and Shing-Chung Wang

Journal of Display Technology, Vol. 3, Issue 2, pp. 118-125 (2007)

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This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces.

© 2007 IEEE

Ya-Ju Lee, Tien-Chang Lu, Hao-Chung Kuo, and Shing-Chung Wang, "High Brightness GaN-Based Light-Emitting Diodes," J. Display Technol. 3, 118-125 (2007)

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