Oxide Electronics by Spatial Atomic Layer Deposition
Journal of Display Technology, Vol. 5, Issue 12, pp. 484-494 (2009)
Acrobat PDF (1349 KB)
Abstract
We report on zinc oxide (ZnO)-based devices produced by a fast, open-air atomic layer deposition (ALD) process relying upon the spatial isolation of reactive gases. At deposition rates of greater than 100 Å per minute, ZnO-based thin-film transistors by spatial atomic layer deposition (S-ALD) show mobility above 15 cm2/Vs and excellent stability. Measurement and modeling of the gas isolation in the deposition head is discussed. Saturation curves obtained for aluminum oxide (Al2O3) growth using trimethylaluminum and water are shown to be consistent with chamber ALD systems. Finally, the ability of this new ALD process to leverage patterning by using poly(methyl methacrylate) (PMMA) as a growth inhibitor for selective area deposition is discussed. Relatively thin films of PMMA (~ 40 Å) are shown to be capable of inhibiting the growth of ZnO for at least 1200 ALD cycles.
© 2009 IEEE
Citation
David H. Levy, Shelby F. Nelson, and Diane Freeman, "Oxide Electronics by Spatial Atomic Layer Deposition," J. Display Technol. 5, 484-494 (2009)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-5-12-484
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
« Previous Article | Next Article »
OSA is a member of 