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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 5, Iss. 12 — Dec. 1, 2009
  • pp: 520–524

Inkjet-Printed High Mobility Transparent–Oxide Semiconductors

Seung-Yeol Han, Doo-Hyoung Lee, Gregory S. Herman, and Chih-Hung Chang

Journal of Display Technology, Vol. 5, Issue 12, pp. 520-524 (2009)


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Abstract

In this paper, we report a general and low-cost process to fabricate high mobility metal–oxide semiconductors that is suitable for thin-film electronics. This process use simple metal halide precursors dissolved in an organic solvent and is capable of forming uniform and continuous thin films via inkjet-printing or spin-coating process. This process has been demonstrated to deposit a variety of semiconducting metal oxides include binary oxides (ZnO, In2O3, SnO2, Ga2O3), ternary oxides (ZIO, ITO, ZTO, IGO) and quaternary compounds (IZTO, IGZO). Functional thin film transistors with high field-effect mobility were fabricated successfully using channel layers deposited from this process. This synthetic pathway opens an avenue to form patterned metal oxide semiconductors through a simple and low-cost process and to fabricate high performance transparent thin film electronics via digital fabrication processes on large substrates.

© 2009 IEEE

Citation
Seung-Yeol Han, Doo-Hyoung Lee, Gregory S. Herman, and Chih-Hung Chang, "Inkjet-Printed High Mobility Transparent–Oxide Semiconductors," J. Display Technol. 5, 520-524 (2009)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-5-12-520

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