Abstract
This paper introduces and verifies a new light-impact model (LIM) for both
p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The
ratio of the produced current under a specific light intensity $(I_{d})$ over the dark current $(I_{\rm dark})$ is calculated. The new model has been also implemented in the
circuit simulation program HSPICE. Comparative results between measurements
and simulated characteristics are presented for different sizes of
widths/lengths, different values of the $V_{\rm ds}$ and $V_{\rm gs}$ voltages and of light intensities.
© 2009 IEEE
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