OSA's Digital Library

Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 7, Iss. 12 — Dec. 1, 2011
  • pp: 640–643

Environmental, Optical, and Electrical Stability Study of Solution-Processed Zinc–Tin–Oxide Thin-Film Transistors

Pradipta K. Nayak, Joana V. Pinto, Gonçalo Gonçalves, Rodrigo Martins, and Elvira Fortunato

Journal of Display Technology, Vol. 7, Issue 12, pp. 640-643 (2011)


View Full Text Article

Acrobat PDF (256 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

In this paper, we report the environmental, optical, and gate bias stress stability of amorphous zinc–tin–oxide (ZTO) thin-film transistors (TFTs) fabricated by sol-gel spin-coating method. The ZTO TFTs showed excellent environmental and optical stability. The threshold voltage stability of ZTO TFTs was sensitive to both positive and negative gate bias stress. Maximum threshold voltage shifting of +1.9 and -3.2 V was observed under a gate bias stress of +10 and -10 V, respectively, with no significant change to subthreshold swing value.

© 2011 IEEE

Citation
Pradipta K. Nayak, Joana V. Pinto, Gonçalo Gonçalves, Rodrigo Martins, and Elvira Fortunato, "Environmental, Optical, and Electrical Stability Study of Solution-Processed Zinc–Tin–Oxide Thin-Film Transistors," J. Display Technol. 7, 640-643 (2011)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-7-12-640


Sort:  Year  |  Journal  |  Reset

References

  1. E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. G. Pimentel, A. M. F. Goncalves, A. J. S. Marques, L. M. N. Pereira, R. F. P. Martins, "Fully transparent ZnO thin-film transistor produced at room temperature," Adv. Mater. 17, 590-594 (2005).
  2. P. Barquinha, L. Pereira, G. Gonçalves, R. Martins, E. Fortunato, "Toward high-performance amorphous GIZO TFTs," J. Electrochem. Soc. 156, H161-H168 (2009).
  3. P. K. Nayak, T. Busani, E. Elamurugu, P. Barquinha, R. Martins, Y. Hong, E. Fortunato, "Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-$\hbox{k}$ dielectric," Appl. Phys. Lett. 97, (2010) Art. ID 183504.
  4. D. H. Lee, Y. J. Chang, G. S. Herman, C. H. Chang, "A general route to printable high-mobility transparent amorphous oxide semiconductors," Adv. Mater. 19, 843-847 (2007).
  5. C. G. Choi, S. J. Seo, B. S. Bae, "Solution-processed indium-zinc oxide transparent thin-film transistors," Electrochem. Solid-State Lett. 11, H7-H9 (2008).
  6. E. M. C. Fortunato, L. M. N. Pereira, P. M. C. Barquinha, A. M. B. Rego, G. Gonçalves, A. Vilà, J. R. Morante, R. F. P. Martins, "High mobility indium free amorphous oxide thin film transistors," Appl. Phys. Lett. 92, 222103 (2008).
  7. M. G. Kim, H. S. Kim, Y. G. Ha, J. He, M. G. Kanatzidis, A. Facchetti, T. J. Marks, "High-performance solution-processed amorphous zinc-indium-tin oxide thin-film transistors," J. Amer. Chem. Soc. 132, 10352-10364 (2010).
  8. P. K. Nayak, J. Jang, C. Lee, Y. Hong, "Effects of Li doping on the performance and environmental stability of solution processed ZnO thin film transistors," Appl. Phys. Lett. 95, (2009) Art. ID 193503.
  9. D. Kang, H. Lim, C. Kim, I. Song, J. Park, Y. Park, "Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules," Appl. Phys. Lett. 90, (2007) Art. ID 192101.
  10. J. S. Park, J. K. Jeong, H. J. Chung, Y. G. Mo, H. D. Kim, "Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water," Appl. Phys. Lett. 92, (2008) Art. ID 072104.
  11. A. Olziersky, P. Barquinha, A. Vilà, L. Pereira, G. Gonçalves, E. Fortunato, R. Martins, J. R. Morante, "Insight on the SU-8 resist as passivation layer for transparent $\hbox{Ga}_{2}\hbox{O}_{3}$–$\hbox{In}_{2}\hbox{O}_{3}$–ZnO thin-film transistors," J. Appl. Phys. 108, (2010) Art. ID 064505.
  12. H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, D. A. Keszler, "High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer," Appl. Phys. Lett. 86, (2005) Art. ID 013503.
  13. S. K. Park, Y. H. Kim, H. S. Kim, J. I. Han, "High performance solution-processed and lithographically patterned zinc–tin oxide thin-film transistors with good operational stability," Electrochem. Solid-State Lett. 12, H256-H258 (2009).
  14. C. G. Lee, A. Dodabalapur, "Solution-processed zinc–tin oxide thin-film transistors with low interfacial trap density and improved performance," Appl. Phys. Lett. 96, (2010) Art. ID 243501.
  15. P. Görrn, M. Lehnhardt, T. Riedl, W. Kowalsky, "The influence of visible light on transparent zinc tin oxide thin film transistors," Appl. Phys. Lett. 91, (2007) Art. ID 193504.
  16. T. Chen, T. C. T. Hsieh, C. Tsai, S. Chen, C. Lin, M. Hung, C. Tu, J. Chang, P. Chen, "Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition," Appl. Phys. Lett. 97, (2010) Art. ID 192103.
  17. F. R. Libsch, J. Kanicki, "Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors," Appl. Phys. Lett. 62, 1286 (1993).
  18. R. B. M. Cross, M. M. De Souza, "Investigating the stability of zinc oxide thin film transistors," Appl. Phys. Lett. 89, (2006) Art. ID 263513.
  19. M. E. Lopes, H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, I. Ferreira, "Gate-bias stress in amorphous oxide semiconductors thin-film transistors," Appl. Phys. Lett. 95, (2009) Art. ID 063502.
  20. P. Liu, Y. Chou, L. Teng, "Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress," Appl. Phys. Lett. 95, (2009) Art. ID 233504.
  21. Y. Jeong, K. Song, D. Kim, C. Y. Koo, J. Moon, "Bias stress stability of solution-processed zinc tin oxide thin-film transistors," J. Electrochem. Soc. 156, H808-H812 (2009).

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited