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Journal of Display Technology

Journal of Display Technology


  • Vol. 8, Iss. 2 — Feb. 1, 2012
  • pp: 104–107

TFTs With High Overlay Alignment for Integration of Flexible Display Backplanes

Maryam Moradi, Minoli Pathirane, Andrei Sazonov, Reza Chaji, and Arokia Nathan

Journal of Display Technology, Vol. 8, Issue 2, pp. 104-107 (2012)

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This work reports an integration process for hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) backplanes on flexible plastic substrates that attempts to reduce the large misalignment between the successive patterned layers in fabrication. Here, a double-sided adhesive tape is used to attach the plastic substrate to a rigid carrier. The results indicate a reduction of overlay misalignment from 22 μm on free-standing foil to 2 μm when laminated to a rigid carrier for five consecutive mask layers. Electrical characteristics of the fabricated a-Si:H TFTs on 3′′ round plastic substrates show an ON/OFF current ratio of over 108, field-effect mobility of 0.8 0.8 cm2/V · s, and gate leakage current of 10-13 A.

© 2012 IEEE

Maryam Moradi, Minoli Pathirane, Andrei Sazonov, Reza Chaji, and Arokia Nathan, "TFTs With High Overlay Alignment for Integration of Flexible Display Backplanes," J. Display Technol. 8, 104-107 (2012)

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