TFTs With High Overlay Alignment for Integration of Flexible Display Backplanes
Journal of Display Technology, Vol. 8, Issue 2, pp. 104-107 (2012)
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Abstract
This work reports an integration process for hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) backplanes on flexible plastic substrates that attempts to reduce the large misalignment between the successive patterned layers in fabrication. Here, a double-sided adhesive tape is used to attach the plastic substrate to a rigid carrier. The results indicate a reduction of overlay misalignment from 22 μm on free-standing foil to 2 μm when laminated to a rigid carrier for five consecutive mask layers. Electrical characteristics of the fabricated a-Si:H TFTs on 3′′ round plastic substrates show an ON/OFF current ratio of over 108, field-effect mobility of 0.8 0.8 cm2/V · s, and gate leakage current of 10-13 A.
© 2012 IEEE
Citation
Maryam Moradi, Minoli Pathirane, Andrei Sazonov, Reza Chaji, and Arokia Nathan, "TFTs With High Overlay Alignment for Integration of Flexible Display
Backplanes," J. Display Technol. 8, 104-107 (2012)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-8-2-104
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