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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 9,
  • Issue 4,
  • pp. 190-198
  • (2013)

Semipolar (20-2-1) InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

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Abstract

This work examines the effects of polarization-related electric fields on the energy band diagrams, wavelength shift, wave function overlap, and efficiency droop for InGaN quantum wells on various crystal orientations, including polar (0001) (<i>c</i>-plane), semipolar (20<sup>-</sup>21), semipolar (20<sup>-</sup>2<sup>-</sup>1, and nonpolar (10<sup>-</sup>10) (<i>m</i>-plane). Based on simulations, we show that the semipolar (20<sup>-</sup>2<sup>-</sup>1) orientation exhibits excellent potential for the development of high-efficiency, low-droop light-emitting diodes (LEDs). We then present recent advancements in crystal growth, optical performance, and thermal performance of semipolar (20<sup>-</sup>2<sup>-</sup>1) LEDs. Finally, we demonstrate a low-droop, high-efficiency single-quantum-well blue semipolar (20<sup>-</sup>2<sup>-</sup>1) LED with an external quantum efficiency of more than 50% at 100 A/cm<sup>2</sup>.

© 2013 IEEE

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