Abstract
We have studied the initial growth modes of GaN on patterned sapphire
substrate (PSS) with different initial TMGa flow rates. The FWHM of the (102)
XRD spectrum of GaN on PSS increased from 470 to 580 arcsec when the initial
TMGa flow rate was increased from 80 to 200 sccm. A low TMGa flow rate sufficiently
suppresses GaN island growth on the top of the pattern and hence improves
GaN crystal quality. The electrical and optical characteristics of GaN-based
LEDs on PSS with low initial TMGa were also improved. More than 90% of the
GaN LED chips with low initial GaN growth rate can hold the 1-kV machine-mode
electrostatic discharge level.
© 2013 IEEE
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