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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 9,
  • Issue 5,
  • pp. 353-358
  • (2013)

GaN-Based Light-Emitting Diodes With Step Graded-Refractive Index (ZnO)x(SiO2)1-x Micropillar Array

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Abstract

Step graded-refractive index (SGRI) (ZnO)<sub><i>x</i></sub>(SiO<sub>2</sub>)<sub>1-<i>x</i></sub> micropillar multilayers have been introduced and demonstrated on GaN-based LEDs combined with the mesh ITO. The SGRI (ZnO)<sub><i>x</i></sub>(SiO<sub>2</sub>)<sub>1-<i>x</i></sub> micropillars were produced by controlling the Zn/Zn+Si ratio of co-sputtered ZnO and SiO<sub>2</sub>. The introduced three-layered SGRI (ZnO)<sub><i>x</i></sub>(SiO<sub>2</sub>)<sub>1-<i>x</i></sub> micropillars improved both critical angle inside GaN LEDs and Fresnel transmittance coefficient (<i>η</i><sub>Fr</sub>) as well as had better light coupling into the micropillars. Moreover, a high number of layers of the SGRI micropillars would aid the light coupled in the pillars to escape from the side wall of the pillar. LEDs with three-layered SGRI (ZnO)<sub><i>x</i></sub>(SiO<sub>2</sub>)<sub>1-<i>x</i></sub> micropillars exhibited output power enhancements of 12.2% with a 20 mA <i>V<sub>f</sub></i> of 3.19 V. The output power of the mesh ITO LEDs with SGRI (ZnO)<sub><i>x</i></sub>(SiO<sub>2</sub>)<sub>1-<i>x</i></sub> micropillars was further enhanced to 15.3% by improving the current spreading.

© 2012 IEEE

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