Abstract
Thin-film transistors (TFTs) with indium gallium oxide and aluminum
indium oxide as a channel layer were fabricated via an aqueous route with
low temperature annealing. The effects of chemical composition on electrical
performance were examined. The fabricated IGO and AIO TFTs exhibited mobility
in the range of 3.9–10.7 cm
$^{2}\cdot{{V}}^{-1}\cdot{{s}}^{-1}$
with an on-to-off current ratio over
$10^{6}$
and a sub-threshold swing of
below 0.7 V/dec at the optimized composition. The optimized IGO and AIO thin-films
were in an amorphous phase, which has an advantage in large area uniformity.
Finally, we performed a positive and negative bias test on the optimized IGO
and AIO TFTs to understand the resistance to external bias stress. The turn-on
voltage shift of the optimized IGO and AIO TFTs, annealed at 300
$^{\circ}$
C, were
1.45 V (negative bias stress), and 1.56 V (positive bias stress) with 3600
s stress, respectively.
© 2013 IEEE
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