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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 9,
  • Issue 9,
  • pp. 729-734
  • (2013)

Extended-Gate ISFETs Based on Sputtered Amorphous Oxides

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Abstract

We present the results obtained with an extended-gate ISFET totally based on amorphous oxides (GIZO as the semiconductor, ${{Ta}}_{2}{{O}}_{5}{{:SiO}}_{2}$ as the dielectric and ${{Ta}}_{2}{{O}}_{5}$ as the sensitive layer). A full characterization of the device was performed with constant ionic strength pH buffer solutions, revealing a sensitivity of 40 mV/pH with small hysteresis, and good linearity in the pH 4–pH 10 range buffer solutions. These results clearly show that it is possible to produce room-temperature disposable and low cost bio-sensors.

© 2012 IEEE

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