Abstract
We propose underwater laser annealing (WLA) for the inactivation
of electrical defects in polycrystalline silicon thin-film transistors (poly-Si
TFTs) at super low-temperature. This technique can reduce the temperature
of inactivation process drastically, and it requires only UV laser and deionized
water. We performed WLA after the fabrication of top-gate type poly-Si TFTs.
After WLA, the field-effect mobility of poly-Si TFTs increased from 52 to
72 cm
$^{2}/{{V}}\cdot{{sec}}$
. The TFT surface was exposed to water vapor which was generated
by laser irradiation, resulting that electrical defects were inactivated by
active species in water vapor.
© 2013 IEEE
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