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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 9,
  • Issue 9,
  • pp. 741-746
  • (2013)

Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin-Film Transistor for Inactivation of Electrical Defects at Super Low Temperature

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Abstract

We propose underwater laser annealing (WLA) for the inactivation of electrical defects in polycrystalline silicon thin-film transistors (poly-Si TFTs) at super low-temperature. This technique can reduce the temperature of inactivation process drastically, and it requires only UV laser and deionized water. We performed WLA after the fabrication of top-gate type poly-Si TFTs. After WLA, the field-effect mobility of poly-Si TFTs increased from 52 to 72 cm $^{2}/{{V}}\cdot{{sec}}$ . The TFT surface was exposed to water vapor which was generated by laser irradiation, resulting that electrical defects were inactivated by active species in water vapor.

© 2013 IEEE

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