The fabrication process and electrical characteristics of bottom-gate Indium Gallium Zinc
Oxide (IGZO) thin-film transistors (TFTs) are reported in details. The influence of post-annealing
ambient (Oxygen or Nitrogen) is studied. It has been found that characteristics of TFTs strongly
depend on annealing conditions. TFTs with Oxygen annealing exhibit standard TFT characteristics.
In this case, we have obtained a mobility of 7.2 cm
© 2013 IEEE
Thi Thu Thuy Nguyen, Olivier Renault, Bernard Aventurier, Guillaume Rodriguez, Jean Paul Barnes, and François Templier, "Analysis of IGZO Thin-Film Transistors by XPS and Relation With Electrical Characteristics," J. Display Technol. 9, 770-774 (2013)