In this paper, a novel voltage-programmed pixel circuit based on amorphous indium-gallium-zinc-oxide thin film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting diode (AMOLED) displays with the enhanced aperture ratio is proposed. The proposed circuit consists of 5 TFTs and one capacitor. Through extensive simulation and layout works, we verified the proposed circuit compensates for the variation of the threshold voltage in a variety of harsh stress conditions. In addition, by removing one storage capacitor and one signal line, the proposed circuit can increase the aperture ratio as well as decrease the complexity of circuit operation in comparison to the conventional pixel circuit.
© 2013 IEEE
Yeonkyung Kim, Yongchan Kim, and Hojin Lee, "A Novel a-InGaZnO TFT Pixel Circuit for AMOLED Display With the Enhanced Reliability and Aperture Ratio," J. Display Technol. 10, 80-83 (2014)