Abstract
In this paper, a novel voltage-programmed pixel circuit based on amorphous
indium-gallium-zinc-oxide thin film transistor (a-InGaZnO TFT) for active-matrix
organic light-emitting diode (AMOLED) displays with the enhanced aperture
ratio is proposed. The proposed circuit consists of 5 TFTs and one capacitor.
Through extensive simulation and layout works, we verified the proposed circuit
compensates for the variation of the threshold voltage in a variety of harsh
stress conditions. In addition, by removing one storage capacitor and one
signal line, the proposed circuit can increase the aperture ratio as well
as decrease the complexity of circuit operation in comparison to the conventional
pixel circuit.
© 2013 IEEE
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