Abstract
This paper reviews the mechanisms underlying visible light detection
based on phototransistors fabricated using amorphous oxide semiconductor technology.
Although this family of materials is perceived to be optically transparent,
the presence of oxygen deficiency defects, such as vacancies, located at subgap
states, and their ionization under illumination, gives rise to absorption
of blue and green photons. At higher energies, we have the usual band-to-band
absorption. In particular, the oxygen defects remain ionized even after illumination
ceases, leading to persistent photoconductivity, which can limit the frame-rate
of active matrix imaging arrays. However, the persistence in photoconductivity
can be overcome through deployment of a gate pulsing scheme enabling realistic
frame rates for advanced applications such as sensor-embedded display for
touch-free interaction.
© 2013 IEEE
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