Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Journal of Display Technology
  • Vol. 10,
  • Issue 11,
  • pp. 928-933
  • (2014)

Source-Gated Transistors for Power- and Area-Efficient AMOLED Pixel Circuits

Not Accessible

Your library or personal account may give you access

Abstract

In this work, the source-gated transistor (SGT) structure is proposed for implementation of the driving transistor in active-matrix organic light-emitting diode (AMOLED) display pixel circuits. The benefits of using the SGT were evaluated through numerical device simulations based on the well-developed low temperature polycrystalline silicon (LTPS) and indium–gallium–zinc–oxide (IGZO) material models. The simulation results prove that significant reductions of the layout area and the power consumption can be achieved for both LTPS and IGZO technologies by using the SGT device structure, which in turn proves that the SGT device structure is potentially an ideal choice for achieving efficient AMOLED pixel circuits.

© 2013 IEEE

PDF Article
More Like This
Effects of source/drain electrode contact length on the photoresponsive properties of organic field-effect transistors

Sunan Xu, Hongquan Xia, Fangzhi Guo, Yuhuan Yang, Yingquan Peng, Wenli Lv, Xiao Luo, Ying Wang, Zouyu Yang, and Lei Sun
Opt. Mater. Express 8(4) 901-908 (2018)

Vertically integrated photo junction-field-effect transistor pixels for retinal prosthesis

Samir Damle, Yu-Hsin Liu, Shaurya Arya, Nicholas W. Oesch, and Yu-Hwa Lo
Biomed. Opt. Express 11(1) 55-67 (2020)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved