Abstract
In this work, the source-gated transistor (SGT) structure is proposed
for implementation of the driving transistor in active-matrix organic light-emitting
diode (AMOLED) display pixel circuits. The benefits of using the SGT were
evaluated through numerical device simulations based on the well-developed
low temperature polycrystalline silicon (LTPS) and indium–gallium–zinc–oxide
(IGZO) material models. The simulation results prove that significant reductions
of the layout area and the power consumption can be achieved for both LTPS
and IGZO technologies by using the SGT device structure, which in turn proves
that the SGT device structure is potentially an ideal choice for achieving
efficient AMOLED pixel circuits.
© 2013 IEEE
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