Abstract
We fabricated bottom-gate, bottom-contact oxide thin-film transistors
(TFTs) using solution-processed strontium -doped
zinc-tin-oxide (SrZTO) as the active material and high-
$\kappa$
aluminum oxide (AlO
$_{\rm x}$
) gate insulator at the maximum
process temperature of 300
$^{\circ}$
C. The effect of Sr content on the device performance of the SrZTO
TFTs was investigated, where Sr was changed from 0 to 20%. With increasing
Sr concentration, threshold voltage shifted to the positive voltage, since
the incorporation of Sr reduces the density of oxygen vacancy in ZTO. The
mobility increases and threshold voltage shift to positive voltage with increasing
Sr, and a 5% Sr doped ZTO transistor with AlO
$_{\rm x}$
gate insulator exhibited the
field effect mobility of 7.82 cm
$^{2}/{{V}}{\cdot}{{s}}$
, subthreshold swing of 121 mV/dec, and threshold voltage of 0.71
V . It is found that the threshold voltage shifts by negative
bias illumination stress decrease with increasing Sr.
© 2014 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription