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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 10,
  • Issue 11,
  • pp. 945-949
  • (2014)

Single-Grain Si TFTs Fabricated From Sputtered Si on a Polyimide Substrate

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Abstract

Single-grain (SG) Si TFTs were fabricated from sputtered a-Si to achieve high performance TFTs on a polyimide substrate using a low temperature (350 $^{\circ}{{C}}$ ) process including $\mu$ -Czochralski crystallization. The carrier mobility is 309 ${{cm}}^{2}/{{V}}\cdot{{s}}$ and 126 ${{cm}}^{2}/{{V}}\cdot{{s}}$ for electrons and holes, respectively. The devices are also successfully transferred to a flexible polyethylene naphyhalate (PEN) foil.

© 2014 IEEE

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