Abstract
Control of the source-drain contact properties in amorphous InGaZnO
semiconductor active layer is relevant since a high series resistance in the
source-drain contacts causes degradation of electrical performance, particularly
affecting short channel devices. We developed a method to extract the current-voltage
characteristics of the injection contact, assuming that contact effects are
negligible in long channel devices and by introducing a modified gradual channel
approximation (quasi-two-dimensional model), to take into account for short
channel effects. The present method allows to extract the parasitic resistance
by using devices with only two different channel lengths. Assuming a transmission
line scheme for the contact resistance and SCLC transport for the current
density flowing along the vertical direction though the IGZO bulk, we have
been able to evaluate the variation with
${\rm V}_{{\rm ds}}$
of contact resistance
at source and drain electrodes.
© 2014 IEEE
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