Abstract
In this paper, crack-free InGaN/GaN multiple quantum wells (MQWs) light-emitting
diodes (LEDs) were transferred from Si (111) substrate onto the electroplating
Cu submount, with inserting a 5-pair TiO
$_{2}$
/SiO
$_{2}$
omnidirectional reflector (ODR) and
an Al mirror, defined as TiO
$_{2}$
/SiO
$_{2}$
–Al ODR. The reflectivity in the blue spectral range of the
TiO
$_{2}$
/SiO
$_{2}$
–Al ODR
was as high as 97%. The current–voltage (I–V) characteristics
showed no obvious degradation of electrical properties for the ODR-based LED
on Cu. In comparison to conventional LEDs on Si without ODRs, the light output
of ODR-based LEDs on Cu was enhanced by 59.3% at a driving current of 350
mA. The improvement is mainly attributed to the following factors: the removal
of the opaque Si substrate, the inserting of the high-reflectivity TiO
$_{2}$
/SiO
$_{2}$
–Al ODR,
and the transfer onto the Cu submount with better thermal conductivity.
© 2014 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription