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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 10, Iss. 2 — Feb. 1, 2014
  • pp: 146–150

Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs

Taiping Lu, Ziguang Ma, Chunhua Du, Yutao Fang, Fangsheng Chen, Yang Jiang, Lu Wang, Haiqiang Jia, and Hong Chen

Journal of Display Technology, Vol. 10, Issue 2, pp. 146-150 (2014)


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Abstract

Staircase electron blocking layer (EBL) is incorporated in InGaN-based blue light-emitting diodes to numerically investigate the efficiency droop mechanism by using the APSYS simulation software. It is found that gradually reducing aluminum (Al) composition in the growth direction of the AlGaN staircase EBL can improve light output power, lower current leakage, and efficiency droop. To the contrary, increasing the Al composition in the staircase EBL along the growth direction will aggravate the electron leakage and efficiency droop. These distinct features are attributed mainly to discrepancy energy band tailoring in the EBL region, and finally different electron blocking efficiency.

© 2014 IEEE

Citation
Taiping Lu, Ziguang Ma, Chunhua Du, Yutao Fang, Fangsheng Chen, Yang Jiang, Lu Wang, Haiqiang Jia, and Hong Chen, "Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs," J. Display Technol. 10, 146-150 (2014)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-10-2-146


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References

  1. J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, C. Weisbuch, "Direct measurement of auger electrons emitted from a semiconductor light emitting diode under electrical injection: Identification of the dominant mechanism for efficiency droop," Phys. Rev. Lett. 110, 177406-1-177406-3 (2013).
  2. C. K. Tan, J. Zhang, X. H. Li, G. Liu, B. O. Tayo, N. Tansu, "First- principle electronic properties of dilute-As GaNAs alloy for visible light emitters," J. Display Technol. 9, 272-279 (2013).
  3. R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, J. S. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Technol. 27, (2012) Art. ID 024001.
  4. D. F. Feezell, J. S. Speck, S. P. DenBaars, S. Nakamura, "Semipolar (202 1) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting," J. Display Technol. 9, 190-198 (2013).
  5. H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, N. Tansu, "Approaches for high internal quantum efficiency green InGaN lightemitting diodes with large overlap quantum wells," Opt. Exp. 19, A991-A1007 (2011).
  6. R. A. Arif, Y. K. Ee, N. Tansu, "Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes," Appl. Phys. Lett. 91, (2007) Art. ID 091110.
  7. G. Liu, J. Zhang, C.-K. Tan, N. Tansu, "Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes," IEEE Photon. J. 5, (2013) Art. ID 2201011.
  8. Y. K. Kuo, J. Y. Chang, M. C. Tasi, S. H. Yen, "Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers," Appl. Phys. Lett. 95, (2009) Art. ID 011116.
  9. M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, Y. Park, "Origin of efficiency droop in GaN-based light-emitting diodes," Appl. Phys. Lett. 91, (2007) Art. ID 183507.
  10. M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, Y. Park, "Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop," Appl. Phys. Lett. 93, (2008) Art. ID 041102.
  11. Y. K. Kuo, J. Y. Chang, M. C. Tsai, "Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer," Opt. Lett. 35, 3285-3287 (2010).
  12. C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, "Hole injection and efficiency droop improvement in InGaN/GaN lightemitting diodes by band-engineered electron blocking layer," Appl. Phys. Lett. 97, (2010) Art. ID 261103.
  13. C. Liu, T. Lu, L. Wu, H. Wang, Y. Yin, G. Xiao, Y. Zhou, S. Li, "Enhanced performance of blue light-emitting diodes with InGaN/GaN superlattice as hole gathering layer," IEEE Photon. Technol. Lett. 24, 1239-1241 (2012).
  14. S. H. Han, D. Y. Lee, S. J. Lee, C. Y. Cho, M. K. Kwon, S. P. Lee, D. Y. Noh, D. J. Kim, Y. C. Kim, S. J. Park, "Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes," Appl. Phys. Lett. 94, (2009) Art. ID 231123.
  15. S. J. Lee, C. Y. Cho, S. H. Hong, S. H. Han, S. Yoon, S. T. Kim, S. J. Park, "Enhanced optical power of InGaN/GaN light-emitting diode by AlGaN interlayer and electron blocking layer," IEEE Photon. Technol. Lett. 24, 1991-1994 (2012).
  16. J. Zhang, W. Tian, F. Wu, W. Yan, H. Xiong, J. Dai, Y. Fang, Z. Wu, C. Chen, "The advantages of AlGaN-based UV-LEDs inserted with a p-AlGaN layer between the EBL and active region," IEEE Photon. J. 5, (2013) Art. ID 1600310.
  17. T. Lu, S. Li, C. Liu, K. Zhang, Y. Xu, J. Tong, L. Wu, H. Wang, X. Yang, Y. Yin, G. Xiao, Y. Zhou, "Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer," Appl. Phys. Lett. 100, (2012) Art. ID 141106.
  18. S. Choi, H. J. Kim, S. S. Kim, J. Liu, J. Kim, J. H. Ryou, R. D. Dupuis, A. M. Fischer, F. A. Ponce, "Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer," Appl. Phys. Lett. 96, (2010) Art. ID 221105.
  19. S. Choi, M. H. Ji, J. M. Kim, M. M. Satter, P. D. Yoder, J. H. Ryou, R. D. Dupuis, A. M. Fischer, F. A. Ponce, "Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers," Appl. Phys. Lett. 101, (2012) Art. ID 161110.
  20. Y. Y. Zhang, Y. A. Yin, "Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer," Appl. Phys. Lett. 99, (2011) Art. ID 221103.
  21. Y. H. Lu, Y. K. Fu, S. J. Huang, Y. K. Su, R. Xuan, M. H. Pilkuhn, "Efficiency enhancement in ultraviolet light-emitting diodes by manipulating polarization effect in electron blocking layer," Appl. Phys. Lett. 102, (2013) Art. ID 143504.
  22. S. J. Chang, S. F. Yu, R. M. Lin, S. Li, T. H. Chiang, S. P. Chang, C. H. Chen, "InGaN-based light-emitting diodes with an AlGaN staircase electron blocking layer," IEEE Photon. Technol. Lett. 24, 1737-1740 (2012).
  23. APSYS Crosslight Software Inc.BurnabyCanada http://www.crosslight.com.
  24. V. Fiorentini, F. Bernardini, O. Ambacher, "Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures," Appl. Phys. Lett. 80, 1204-1206 (2002).
  25. M. C. Tsai, S. H. Yen, Y. C. Lu, Y. K. Kuo, "Numerical study of blue InGaN light-emitting diodes with varied barrier thicknesses," IEEE Photon. Technol. Lett. 23, 76-78 (2011).
  26. I. Vurgaftman, J. R. Meyer, "Band parameters for nitrogen-containing semiconductors," J. Appl. Phys. 94, 3675-3696 (2003).
  27. J. Piprek, Nitride Semiconductor Devices: Principles and Simulation (Springer-Verlag, 2007).
  28. A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, M. R. Krames, "Carrier distribution in (0001) InGaN/GaN multiple quantum well light-emitting diodes," Appl. Phys. Lett. 92, (2008) Art. ID 053502.

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