Abstract

The authors experimentally studied GaN-based light-emitting diodes (LEDs) with both an staircase electron injector (SEI) structure and a conventional electron blocking layer (EBL). With the EBL, it was found that we could enhance LED output power, reduce forward voltage, and mitigate efficiency droop by inserting the SEI structure. These improvements could all be attributed to the effective cooling of the injected hot electrons. However, it was also found that some of the injected electrons could still leak into the p-GaN layer in the LED with SEI structure but without the EBL.

© 2013 IEEE

Efficiency improvement by polarization-reversed electron blocking structure in GaN-based Light-emitting diodes

Xiaoli Ji, Tongbo Wei, Fuhua Yang, Hongxi Lu, Xuecheng Wei, Ping Ma, Xiaoyan Yi, Junxi Wang, Yiping Zeng, Guohong Wang, and Jinmin Li
Opt. Express 22(S3) A1001-A1008 (2014)

Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes

Chun-Ta Yu, Wei-Chih Lai, Cheng-Hsiung Yen, and Shoou-Jinn Chang
Opt. Express 22(S3) A663-A670 (2014)

High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer

An-Jye Tzou, Da-Wei Lin, Chien-Rong Yu, Zhen-Yu Li, Yu-Kuang Liao, Bing-Cheng Lin, Jhih-Kai Huang, Chien-Chung Lin, Tsung Sheng Kao, Hao-Chung Kuo, and Chun-Yen Chang
Opt. Express 24(11) 11387-11395 (2016)

Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer

Bing-Chen Lin, Kuo-Ju Chen, Chao-Hsun Wang, Ching-Hsueh Chiu, Yu-Pin Lan, Chien-Chung Lin, Po-Tsung Lee, Min-Hsiung Shih, Yen-Kuang Kuo, and Hao-Chung Kuo
Opt. Express 22(1) 463-469 (2014)

High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes

Barsha Jain, Ravi Teja Velpula, Ha Quoc Thang Bui, Hoang-Duy Nguyen, Trupti Ranjan Lenka, Truong Khang Nguyen, and Hieu Pham Trung Nguyen
Opt. Express 28(1) 665-675 (2020)