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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 10, Iss. 3 — Mar. 1, 2014
  • pp: 204–207

GaN-Based Light-Emitting-Diode With a p-InGaN Layer

P. H. Chen, Cheng-Huang Kuo, W. C. Lai, Yu An Chen, L. C. Chang, and S. J. Chang

Journal of Display Technology, Vol. 10, Issue 3, pp. 204-207 (2014)


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Abstract

GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick ${p-In}_{0.01}{Ga}_{0.99}{N}$ layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%.

© 2013 IEEE

Citation
P. H. Chen, Cheng-Huang Kuo, W. C. Lai, Yu An Chen, L. C. Chang, and S. J. Chang, "GaN-Based Light-Emitting-Diode With a p-InGaN Layer," J. Display Technol. 10, 204-207 (2014)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-10-3-204

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